Growth of Al<subscript>x</subscript>Ga<subscript>1−x</subscript> as by metalorganic chemical vapor deposition using trimethylgallium and trimethylamine alane
In: Journal of Electronic Materials, Jg. 21 (1992-11-01), Heft 11, S. 1047-1050
Online
academicJournal
Zugriff:
Titel: |
Growth of Al<subscript>x</subscript>Ga<subscript>1−x</subscript> as by metalorganic chemical vapor deposition using trimethylgallium and trimethylamine alane
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Autor/in / Beteiligte Person: | Sundaram, V. S. ; Fraas, L. M. ; Samuel, C. C. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 21 (1992-11-01), Heft 11, S. 1047-1050 |
Veröffentlichung: | 1992 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/bf02665882 |
Sonstiges: |
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