MBE growth and properties of GaN and Al<subscript>x</subscript>Ga<subscript>1−x</subscript>N on GaN/SiC substrates
In: Journal of Electronic Materials, Jg. 25 (1996-05-01), Heft 5, S. 793-797
Online
academicJournal
Zugriff:
Titel: |
MBE growth and properties of GaN and Al<subscript>x</subscript>Ga<subscript>1−x</subscript>N on GaN/SiC substrates
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Autor/in / Beteiligte Person: | Johnson, M. A. L. ; Fujita, Shizuo ; Rowland, W. H. ; Hughes, W. C. ; He, Y. W. ; El-Masry, N. A. ; Cook, J. W. ; Schetzina, J. F. ; Ren, J. ; Edmond, J. A. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 25 (1996-05-01), Heft 5, S. 793-797 |
Veröffentlichung: | 1996 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/bf02666638 |
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