Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
In: Semiconductors, Jg. 52 (2018-12-01), Heft 15, S. 1947-1952
Online
academicJournal
Zugriff:
Titel: |
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
|
---|---|
Autor/in / Beteiligte Person: | Revin, M. V. ; Kotkov, A. P. ; Ivanov, V. A. ; Rad’kov, Yu. F. ; Svinkov, N. V. ; Artemov, A. N. ; Gribov, B. G. |
Link: | |
Zeitschrift: | Semiconductors, Jg. 52 (2018-12-01), Heft 15, S. 1947-1952 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 1063-7826 (print) ; 1090-6479 (print) |
DOI: | 10.1134/s1063782618150113 |
Sonstiges: |
|