Modeling of Single Ionizing Particle Impacts on Logical Elements of a CMOS Triple Majority Gate
In: Russian Microelectronics, Jg. 49 (2020-05-01), Heft 3, S. 214-223
Online
academicJournal
Zugriff:
Titel: |
Modeling of Single Ionizing Particle Impacts on Logical Elements of a CMOS Triple Majority Gate
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Autor/in / Beteiligte Person: | Katunin, Yu. V. ; Stenin, V. Ya. |
Link: | |
Zeitschrift: | Russian Microelectronics, Jg. 49 (2020-05-01), Heft 3, S. 214-223 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 1063-7397 (print) ; 1608-3415 (print) |
DOI: | 10.1134/s1063739720020043 |
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