Use of high-purity Al<subscript>x</subscript>Ga<subscript>1−x </subscript>as layers in epitaxial structures for high-power microwave field-effect transistors
In: Technical Physics Letters, Jg. 25 (1999-08-01), Heft 8, S. 595-597
Online
academicJournal
Zugriff:
Titel: |
Use of high-purity Al<subscript>x</subscript>Ga<subscript>1−x </subscript>as layers in epitaxial structures for high-power microwave field-effect transistors
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Autor/in / Beteiligte Person: | Zhuravlev, K. S. ; Toropov, A. I. ; Shamirzaev, T. S. ; Bazarov, A. K. ; Rakov, Yu. N. ; Myakishev, Yu. B. |
Link: | |
Zeitschrift: | Technical Physics Letters, Jg. 25 (1999-08-01), Heft 8, S. 595-597 |
Veröffentlichung: | 1999 |
Medientyp: | academicJournal |
ISSN: | 1063-7850 (print) ; 1090-6533 (print) |
DOI: | 10.1134/1.1262567 |
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