Residual impurities in GaN/Al<subscript>2</subscript>O<subscript>3</subscript> grown by metalorganic vapor phase epitaxy
In: Journal of Electronic Materials, Jg. 25 (1996-05-01), Heft 5, S. 799-803
Online
academicJournal
Zugriff:
Titel: |
Residual impurities in GaN/Al<subscript>2</subscript>O<subscript>3</subscript> grown by metalorganic vapor phase epitaxy
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Autor/in / Beteiligte Person: | Ishibashi, Akihiko ; Takeishi, Hidemi ; Mannoh, Masaya ; Yabuuchi, Yasufumi ; Ban, Yuzaburoh |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 25 (1996-05-01), Heft 5, S. 799-803 |
Veröffentlichung: | 1996 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/bf02666639 |
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