Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition
In: Journal of Electronic Materials, Jg. 30 (2001), Heft 1, S. 23-26
Online
academicJournal
Zugriff:
Titel: |
Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition
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Autor/in / Beteiligte Person: | Kokubun, Y. ; Nishio, J. ; Abe, M. ; Ehara, T. ; Nakagomi, S. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 30 (2001), Heft 1, S. 23-26 |
Veröffentlichung: | 2001 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/s11664-001-0210-0 |
Sonstiges: |
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