A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI<subscript>4</subscript>-doped inGaAs
In: Journal of Electronic Materials, Jg. 23 (1994-08-01), Heft 8, S. 791-799
Online
academicJournal
Zugriff:
Titel: |
A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI<subscript>4</subscript>-doped inGaAs
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Autor/in / Beteiligte Person: | Stockman, S. A. ; Hanson, A. W. ; Colomb, C. M. ; Fresina, M. T. ; Baker, J. E. ; Stillman, G. E. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 23 (1994-08-01), Heft 8, S. 791-799 |
Veröffentlichung: | 1994 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/bf02651375 |
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