Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
In: Journal of Electronic Materials, Jg. 29 (2000-02-01), Heft 2, S. 205-209
Online
academicJournal
Zugriff:
Titel: |
Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
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Autor/in / Beteiligte Person: | Brunner, F. ; Richter, E. ; Bergunde, T. ; Rechenberg, I. ; Bhattacharya, A. ; Maassdorf, A. ; Tomm, J. W. ; Kurpas, P. ; Achouche, M. ; Würfl, J. ; Weyers, M. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 29 (2000-02-01), Heft 2, S. 205-209 |
Veröffentlichung: | 2000 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/s11664-000-0143-z |
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