Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
In: Scientific Reports, Jg. 14 (2024-12-01), Heft 1
Online
academicJournal
Zugriff:
Titel: |
Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
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Autor/in / Beteiligte Person: | Dhasiyan, Arun Kumar ; Amalraj, Frank Wilson ; Jayaprasad, Swathy ; Shimizu, Naohiro ; Oda, Osamu ; Ishikawa, Kenji ; Hori, Masaru |
Link: | |
Zeitschrift: | Scientific Reports, Jg. 14 (2024-12-01), Heft 1 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 2045-2322 (print) |
DOI: | 10.1038/s41598-024-61501-9 |
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