Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN
In: Journal of Electronic Materials, Jg. 26 (1997-03-01), Heft 3, S. 243-251
Online
academicJournal
Zugriff:
Titel: |
Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN
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Autor/in / Beteiligte Person: | Hwang, C. Y. ; Schurman, M. J. ; Mayo, W. E. ; Lu, Y. C. ; Stall, R. A. ; Salagaj, T. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 26 (1997-03-01), Heft 3, S. 243-251 |
Veröffentlichung: | 1997 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/s11664-997-0158-9 |
Sonstiges: |
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