A design and comparative investigation of graded Al<subscript>x</subscript>Ga<subscript>1 − x</subscript> N QB for W-Al<subscript>0.58</subscript>GaN/W-Al<subscript>0.64–0.58</subscript> GaN DUV laser diode on AlN substrate
In: The European Physical Journal D: Atomic, Molecular, Optical and Plasma Physics, Jg. 78 (2024-02-01), Heft 2
Online
academicJournal
Zugriff:
Titel: |
A design and comparative investigation of graded Al<subscript>x</subscript>Ga<subscript>1 − x</subscript> N QB for W-Al<subscript>0.58</subscript>GaN/W-Al<subscript>0.64–0.58</subscript> GaN DUV laser diode on AlN substrate
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Autor/in / Beteiligte Person: | Rehman, Hameed Ur ; Rahman, Naveed Ur ; Haq, Inayatul ; Wang, Fang ; Liu, Yuhuai |
Link: | |
Zeitschrift: | The European Physical Journal D: Atomic, Molecular, Optical and Plasma Physics, Jg. 78 (2024-02-01), Heft 2 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 1434-6060 (print) ; 1434-6079 (print) |
DOI: | 10.1140/epjd/s10053-024-00811-z |
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