A comparative study of selective carbon doping in MOCVD GaAs using trimethylarsenic and arsine
In: Journal of Electronic Materials, Jg. 19 (1990-12-01), Heft 12, S. 1351-1355
Online
academicJournal
Zugriff:
Titel: |
A comparative study of selective carbon doping in MOCVD GaAs using trimethylarsenic and arsine
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Autor/in / Beteiligte Person: | Moon, Hyukju J. ; Stoebe, Thomas G. ; Chadwick, Brian K. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 19 (1990-12-01), Heft 12, S. 1351-1355 |
Veröffentlichung: | 1990 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/bf02662824 |
Sonstiges: |
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