Properties of gaas:si epitaxial layers grown in a multiwafer MOCVD reactor
In: Journal of Electronic Materials, Jg. 14 (1985-11-01), Heft 6, S. 769-781
Online
academicJournal
Zugriff:
Titel: |
Properties of gaas:si epitaxial layers grown in a multiwafer MOCVD reactor
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Autor/in / Beteiligte Person: | Kanber, H. ; Zielinski, T. ; Whelan, J. M. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 14 (1985-11-01), Heft 6, S. 769-781 |
Veröffentlichung: | 1985 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/bf02654310 |
Sonstiges: |
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