In Situ Raman Studies of AsH3, and TMG Thermal Decomposition in GaAs MOVPE Conditions
In: Mechanisms of Reactions of Organometallic Compounds with Surfaces, Jg. 198 (1989), S. 169-178
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Titel: |
In Situ Raman Studies of AsH3, and TMG Thermal Decomposition in GaAs MOVPE Conditions
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Autor/in / Beteiligte Person: | Monteil, Y. ; Raffin, P. ; Abraham, P. ; Favre, R. ; Bouix, J. ; Cole-Hamilton, D. J. [Ed.] ; Williams, J. O. [Ed.] |
Zeitschrift: | Mechanisms of Reactions of Organometallic Compounds with Surfaces, Jg. 198 (1989), S. 169-178 |
Veröffentlichung: | 1989 |
Medientyp: | E-Book |
ISBN: | 978-1-4899-2524-4 (print) ; 978-1-4899-2522-0 (print) |
DOI: | 10.1007/978-1-4899-2522-0_20 |
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