| Sonstiges: |
- Nachgewiesen in: USPTO Patent Applications
- Sprachen: English
- Document Number: 20160042846
- Publication Date: February 11, 2016
- Appl. No: 14/821520
- Application Filed: August 07, 2015
- Claim: 1. A device comprising: a substrate; a dielectric or insulator layer on the substrate; and an inductor on the dielectric or insulator layer, wherein the inductor comprises a magnetic material comprising at least one of: at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain, wherein x is a number greater than zero and less than one: or at least one α″-Fe16N2 or α′-Fe8N phase domain and at least one α″-Fe16Z2 or α′-Fe8Z phase domain, wherein Z includes at least one of C, B, or O.
- Claim: 2. The device of claim 1, wherein the inductor comprises a core, and wherein the core comprises the magnetic material.
- Claim: 3. The device of claim 2, wherein the core comprises a substantially planar spiral portion.
- Claim: 4. The device of claim 2, wherein the core comprises a plurality of substantially planar spiral portions.
- Claim: 5. The device of claim 2, wherein the magnetic material comprises the at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain, and wherein x is equal to about 0.5.
- Claim: 6. The device of claim 2, wherein the magnetic material comprises the at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain, and wherein x is equal to about 0.4667.
- Claim: 7. The device of claim 2, wherein Z consists of C.
- Claim: 8. The device of claim 2, wherein the magnetic material comprises a saturation magnetization of at least about 200 emu/gram.
- Claim: 9. The device of claim 2, wherein the magnetic material comprises a saturation magnetization of greater than about 250 emu/gram.
- Claim: 10. The device of claim 2, wherein the magnetic material comprises a magnetic coercivity of less than or equal to about 10 Oerstads.
- Claim: 11. The device of claim 2, wherein the magnetic material comprises the at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain, and wherein at least about 35 volume percent of the magnetic material is the at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain.
- Claim: 12. The device of claim 2, wherein at least about 60 volume percent of the magnetic material is the at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain.
- Claim: 13. The device of claim 2, wherein the magnetic material comprises the at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain, wherein the at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain comprises a plurality of α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) crystals, and wherein respective [001] axes of the plurality of crystals are randomly distributed within the magnetic material.
- Claim: 14. The device of claim 2, wherein the magnetic material comprises the at least one α″-Fe16N2 or α′-Fe8N phase domain and the at least one α″-Fe16Z2 or α′-Fe8Z phase domain, wherein the at least one α″-Fe16N2 or α′-Fe8N phase domain comprises a plurality of α″-Fe16N2 or α′-Fe8N crystals, wherein the at least one α″-Fe16Z2 or α′-Fe8Z phase domain comprises a plurality of α″-Fe16Z2 or α′-Fe8Z crystals, and wherein respective [001] axes of the plurality of α″-Fe16N2 or α′-Fe8N crystals and respective [001] axes of the plurality of α″-Fe16Z2 or α′-Fe8Z crystals are randomly distributed within the magnetic material.
- Claim: 15. The device of claim 2, wherein the magnetic material comprises the at least one α″-Fe16N2 or α′-Fe8N phase domain and the at least one α″-Fe16Z2 or α′-Fe8Z phase domain, and wherein the at least one α″-Fe16N2 or α′-Fe8N phase domain and the at least one α″-Fe16Z2 or α′-Fe8Z phase domain together form at least about 35 volume percent of the magnetic material.
- Claim: 16. The device of claim 2, wherein the magnetic material comprises the at least one α″-Fe16N2 or α′-Fe8N phase domain and the at least one α″-Fe16Z2 or α′-Fe8Z phase domain, and wherein the at least one α″-Fe16N2 or α′-Fe8N phase domain and the at least one α″-Fe16Z2 or α′-Fe8Z phase domain together form at least about 60 volume percent of the magnetic material.
- Claim: 17. The device of claim 2, further comprising an impedance matching circuit, wherein the impedance matching circuit comprises the inductor.
- Claim: 18. The device of claim 2, further comprising a low pass filter, wherein the low pass filter comprises the inductor.
- Claim: 19. The device of claim 2, further comprising an AC-DC converter, wherein the AC-DC converter comprises the inductor.
- Claim: 20. The device of claim 2, further comprising an antenna, wherein the antenna comprises a magnetic material comprising at least one of: at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain, wherein x is a number greater than zero and less than one; or at least one α″-Fe16N2 or α′-Fe8N phase domain and at least one α″-Fe16Z2 or α′-Fe8Z phase domain, wherein Z includes at least one of C, B, or O.
- Claim: 21. The device of claim 20, wherein the antenna comprises a multiband antenna.
- Claim: 22. The device of claim 2, further comprising a radio frequency energy harvesting device, wherein the radio frequency energy harvesting device comprises the inductor.
- Claim: 23. A method comprising: forming a dielectric or insulator layer on a substrate; and forming an inductor on the dielectric or insulator layer, wherein a core of the inductor comprises a magnetic material comprising at least one of: at least one α″-Fe16(NxZ1-x)2 phase domain, wherein x is a number greater than zero and less than one; or at least one α″-Fe16N2 phase domain and at least one α″-Fe16Z2 phase domain, wherein Z includes at least one of C, B, or O.
- Claim: 24. The method of claim 23, wherein forming the inductor comprises: heating an iron source to form a vapor comprising an iron-containing compound; depositing iron from the vapor comprising the iron-containing compound, nitrogen from a vapor comprising a nitrogen-containing compound, and at least one of carbon, boron, or oxygen from a vapor comprising the compound containing the at least one of carbon, boron, or oxygen on the dielectric or insulator layer to form a layer comprising iron, nitrogen, and the at least one of carbon, boron, or oxygen; and annealing the layer comprising iron, nitrogen, and the at least one of carbon, boron, or oxygen to form the inductor.
- Claim: 25. The method of claim 23, wherein forming the inductor comprises: submerging a dielectric or insulator layer on a substrate in a coating solution comprising a nitrogen-containing solvent, an iron source, and a carbon source, wherein the coating solution is saturated with the iron source at a first temperature above a liquidus temperature of an iron-carbon-nitrogen mixture to be deposited from the coating solution; cooling the coating solution to a second temperature to form a supersaturated coating solution, wherein the second temperature is below the liquidus temperature of the iron-carbon-nitrogen mixture; maintaining the substrate in the supersaturated coating solution to allow a coating comprising iron, carbon, and nitrogen to form on the substrate; and annealing the coating comprising iron, carbon, and nitrogen to form the inductor.
- Claim: 26. The method of claim 24, further comprising: defining a depression in the dielectric or insulator layer corresponding to a shape of at least part of the inductor; wherein forming the inductor on the dielectric or insulator layer comprises forming the inductor in the depression.
- Claim: 27. The method of claim 25, further comprising: defining a depression in the dielectric or insulator layer corresponding to a shape of at least part of the inductor; wherein forming the inductor on the dielectric or insulator layer comprises forming the inductor in the depression.
- Claim: 28. The method of claim 24, wherein forming an inductor on the dielectric or insulator layer comprises: forming a layer comprising the magnetic material on the dielectric or insulator layer; and etching the layer comprising the magnetic material to define a shape of at least part of the inductor.
- Claim: 29. The method of claim 25, wherein forming an inductor on the dielectric or insulator layer comprises: forming a layer comprising the magnetic material on the dielectric or insulator layer; and etching the layer comprising the magnetic material to define a shape of at least part of the inductor.
- Claim: 30. The method of claim 23, further comprising forming an impedance matching circuit, wherein the impedance matching circuit comprises the inductor.
- Claim: 31. The method of claim 23, further comprising forming a low pass filter, wherein the low pass filter comprises the inductor.
- Claim: 32. The method of claim 23, further comprising forming an AC-DC converter, wherein the AC-DC converter comprises the inductor.
- Claim: 33. The method of claim 23, further comprising forming an antenna on the dielectric or insulator layer, wherein the antenna comprises a magnetic material comprising at least one of: at least one α″-Fe16(NxZ1-x)2 or α′-Fe8(NxZ1-x) phase domain, wherein x is a number greater than zero and less than one; or at least one α″-Fe16N2 or α′-Fe8N phase domain and at least one α″-Fe16Z2 or α′-Fe8Z phase domain, wherein Z includes at least one of C, B, or O.
- Claim: 34. The method of claim 33, wherein the antenna comprises a multiband antenna.
- Claim: 35. The method of claim 33, further comprising forming a radio frequency energy harvesting device, wherein the radio frequency energy harvesting device comprises the inductor.
- Current International Class: 01; 01; 01
|
