CHARGE-TRAP TYPE FLASH MEMORY DEVICE HAVING LOW-HIGH-LOW ENERGY BAND STRUCTURE AS TRAPPING LAYER
2014
Online
Patent
Zugriff:
A charge-trap type flash memory device having a low-high-low energy band as a trapping layer embeds Al2O3 between Si3N4 and HfO2 as a CT layer. Most injected charged can be trapped at an interface of Si3N4/Al2O3. Al2O3 can also provide a high blocking effect for electronic dissipation. Therefore this invention can enhance the writing and retention characteristics for CT VNM.
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CHARGE-TRAP TYPE FLASH MEMORY DEVICE HAVING LOW-HIGH-LOW ENERGY BAND STRUCTURE AS TRAPPING LAYER
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Veröffentlichung: | 2014 |
Medientyp: | Patent |
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