Einzeltreffer — DigiBib

A charge-trap type flash memory device having a low-high-low energy band as a trapping layer embeds Al2O3 between Si3N4 and HfO2 as a CT layer. Most injected charged can be trapped at an interface of Si3N4/Al2O3. Al2O3 can also provide a high blocking effect for electronic dissipation. Therefore this invention can enhance the writing and retention characteristics for CT VNM.

Titel:	CHARGE-TRAP TYPE FLASH MEMORY DEVICE HAVING LOW-HIGH-LOW ENERGY BAND STRUCTURE AS TRAPPING LAYER
Link:	Zum Volltext
Veröffentlichung:	2014
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20140217492 Publication Date: August 7, 2014 Appl. No: 13/758713 Application Filed: February 04, 2013 Assignees: NATIONAL TSING HUA UNIVERSITY (Hsinchu City, TW) Claim: 1. A charge-trap type flash memory device having a low-high-low energy band as a trapping layer, comprising a silicon substrate, a charge trapping (CT) layer, used to trap charges, wherein the charge trapping layer comprises a silicon nitride (Si3N4) film, an intermediate oxide layer and a hafnium oxide (HfO2) film; the silicon nitride film contributes to improve the retention characteristics; the intermediate oxide layer is used to regulate the distribution of the trapped charges; the hafnium oxide film is used to increase the memory window; and the conduction band offset (ΔEc) of the intermediate oxide layer is greater than that of the silicon nitride film and the hafnium oxide film; a tunneling oxide layer, between the silicon substrate and the charge trapping layer and adjacent the silicon nitride film to prevent any charges from losing from the charge trapping layer to the silicon substrate; a metal gate electrode; and a blocking oxide layer, disposed between the charge trapping layer and the metal gate electrode to block any charges so as to prevent any loss from the charge trapping layer to the metal gate electrode. Claim: 2. The charge-trap type flash memory device of claim 1, wherein the intermediate oxide layer is selected from silicon oxynitride (SiON), aluminum oxynitride (AlON) or aluminum oxide (Al2O3). Claim: 3. The charge-trap type flash memory device of claim 1, wherein the charge trapping layer is made of high dielectric constant (high-κ) material Claim: 4. The charge-trap type flash memory device of claim 1, wherein the tunneling oxide layer has a thickness of 2˜4 nanometers (nm). Claim: 5. The charge-trap type flash memory device of claim 1, wherein an equivalent silicon nitride thickness of the charge trapping layer comprising the silicon nitride film, an intermediate oxide layer and a hafnium oxide is 5˜7 nm. Claim: 6. The charge-trap type flash memory device of claim 5, wherein the silicon nitride film has a thickness of >3 nm. Claim: 7. The charge-trap type flash memory device of claim 5, wherein the intermediate oxide layer has a thickness of ≦3 nm. Claim: 8. The charge-trap type flash memory device of claim 1, wherein the blocking oxide layer has a thickness of 12˜18 nm. Claim: 9. The charge-trap type flash memory device of claim 1, wherein the metal gate electrode has a thickness of 40˜60 nm. Claim: 10. The charge-trap type flash memory device of claim 1, wherein the metal gate electrode is the one which is patterned by etching. Current U.S. Class: 257/324 Current International Class: 01

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CHARGE-TRAP TYPE FLASH MEMORY DEVICE HAVING LOW-HIGH-LOW ENERGY BAND STRUCTURE AS TRAPPING LAYER