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Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.

Titel:	TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS
Autor/in / Beteiligte Person:	Vuong, Vi ; Bao, Junwei ; Chen, Yan ; Heiko, Weichert ; Egret, Sebastien
Link:	Zum Volltext
Veröffentlichung:	2012
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20120199287 Publication Date: August 9, 2012 Appl. No: 13/444746 Application Filed: April 11, 2012 Assignees: TOKYO ELECTRON LIMITED (Tokyo, JP) Claim: 1. A treatment system for etching a feature into a substrate, comprising: an etching system configured to etch a pattern in one or more substrates using a lithographic structure prepared in a film of light-sensitive material to radiation; a metrology system to measure a set of metrology data for said one or more substrates treated in said etching system for variations in process data for said etching system, wherein said process data comprises a gas pressure in said etching system, a flow rate of a process gas into said etching system, a power coupled to said process gas in said etching system, a time for performing an etching process in said etching system, a temperature of said one or more substrates, or a temperature of a substrate holder for supporting said one or more substrates, or any combination of two or more thereof; a data processing system configured to: obtain said set of metrology data; determine one or more essential variables for said obtained set of metrology data using multivariate analysis; obtain new metrology data measured using said metrology system; and transform said new metrology data into refined metrology data using said one or more essential variables, wherein said metrology data comprises optical metrology data, and wherein said optical metrology data comprises an optical signal resulting from illuminating one or more structures on said one or more substrates with an incident optical signal. Claim: 2. The treatment system of claim 1, wherein said data processing system is further configured to: correlate at least one of said one or more essential variables with a critical dimension of said pattern; and select said at least one of said one or more essential variables that correlates with said critical dimension to transform said new metrology data. Claim: 3. The treatment system of claim 1, wherein said multivariate analysis comprises principal components analysis (PCA). Claim: 4. The treatment system of claim 1, further comprising: a controller coupled to said etching system, and configured to control said etching system using refined metrology data. Current U.S. Class: 15634/526 Current International Class: 01

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TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS