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In order to provide a method of manufacturing a bow tie antenna by using a photolithography of a comparatively low level, a truncated quadrangular pyramid is formed by forming on a substrate an etching mask of a shape similar to a top face of the truncated quadrangular pyramid, and isotropy-etching the substrate with the etching mask being made a mask material. Thereafter, metal films are formed on two opposite side faces of the truncated quadrangular pyramid by injecting a vacuum deposition source from a front of each of the faces and a direction parallel to the substrate.

Titel:	Method of manufacturing near field light generation element
Autor/in / Beteiligte Person:	Hirata, Masakazu ; Oumi, Manabu ; Shibata, Koichi
Link:	Zum Volltext
Veröffentlichung:	2006
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20060261177 Publication Date: November 23, 2006 Appl. No: 11/360278 Application Filed: February 23, 2006 Claim: 1. A method of manufacturing a near field light generation element having a metal film on two opposite side faces of a truncated pyramid comprising a top face and the four side faces, the method comprising the steps of: a process of forming on a substrate an etching mask of a shape similar to the top face, a process of forming the truncated pyramid from the substrate by isotropy-etching the substrate with the etching mask being made a mask material, and a process of forming the metal film on the two opposite side faces of the truncated pyramid. Claim: 2. A method of manufacturing a near field light generation element according to claim 1, further comprising the steps of: a process of forming a sacrifice layer on three arbitrary side faces of the truncated pyramid, a process of forming thereafter the metal film on at least one remaining side face of the truncated pyramid, and a process of removing, while removing the sacrifice layer, also the metal film having adhered on the sacrifice layer. Claim: 3. A method of manufacturing a near field light generation element according to claim 2, wherein the process of forming the sacrifice layer on the three arbitrary side faces of the truncated pyramid forms, by injecting a material of the sacrifice layer from a direction perpendicular to the side face predetermined toward the predetermined side face, the sacrifice layer on the three arbitrary side faces consisting of the predetermined side face and the two side faces adjoining with their sides being contacted with the predetermined side face. Claim: 4. A method of manufacturing a near field light generation element according to claim 3, wherein the process of forming the sacrifice layer is performed by using a vacuum deposition apparatus. Claim: 5. A method of manufacturing a near field light generation element according to claim 2, wherein, in the process of removing, while removing the sacrifice layer, also the metal film having adhered on the sacrifice layer, the removal is performed by applying an ultrasonic wave. Claim: 6. A method of manufacturing a near field light generation element according to claim 1, further comprising the step of a process of plastically deforming the metal film. Claim: 7. A method of manufacturing a near field light generation element according to claim 1, further comprising the steps of: a process of coating the side face and the top face of the truncated pyramid by the metal film, a process of forming an etching mask on the metal film existing on three arbitrary side faces of the truncated pyramid, and a process of leaving a metal film on one remaining side face of the truncated pyramid by etching the metal film with the etching mask being made a mask material. Claim: 8. A method of manufacturing a near field light generation element according to claim 7, wherein the process of forming the etching mask on the metal film existing on three arbitrary side faces of the truncated pyramid forms, by injecting a material of the etching mask from a direction perpendicular to the side face predetermined toward the predetermined side face, the etching mask on the three arbitrary side faces consisting of the predetermined side face and the two side faces adjoining with their sides being contacted with the predetermined side face. Claim: 9. A method of manufacturing a near field light generation element according to claim 8, wherein the process of forming the etching mask is performed by using a vacuum deposition apparatus. Claim: 10. A method of manufacturing a near field light generation element according to claim 1, further comprising the step of a process of coating the side face of the truncated pyramid by a shading film with the top face vicinity being left. Claim: 11. A method of manufacturing a near field light generation element according to claim 10, wherein the process of coating the side face of the truncated pyramid by the shading film with the top face vicinity being left comprises a process of coating a whole of the truncated pyramid by the shading film, and a process of plastically deforming the shading film. Claim: 12. A method of manufacturing a near field light generation element according to claim 10, wherein the shading film is formed by using a film formation source consisting of Al. Claim: 13. A method of manufacturing a near field light generation element according to claim 1, wherein the metal film is formed by using a film formation source consisting of Au or Ag. Claim: 14. A method of manufacturing a near field light generation element according to claim 1, wherein the metal film is formed by using a vacuum deposition apparatus. Claim: 15. A method of manufacturing a near field light generation element according to claim 2, further comprising the step of a process of plastically deforming the metal film. Claim: 16. A method of manufacturing a near field light generation element according to claim 3, further comprising the step of a process of plastically deforming the metal film. Claim: 17. A method of manufacturing a near field light generation element according to claim 2, further comprising the step of a process of coating the side face of the truncated pyramid by a shading film with the top face vicinity being left. Claim: 18. A method of manufacturing a near field light generation element according to claim 7, further comprising the step of a process of coating the side face of the truncated pyramid by a shading film with the top face vicinity being left. Claim: 19. A method of manufacturing a near field light generation element according to claim 8, further comprising the step of a process of coating the side face of the truncated pyramid by a shading film with the top face vicinity being left. Current U.S. Class: 239001/000 Current International Class: 01; 05

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Method of manufacturing near field light generation element