Raman Scattering from Trimethylaluminum (TMA) :Free and Adsorbed Molecules on GaAs(100)
1993
Online
Elektronische Ressource
We have measured the Raman scattering from an adsorbed layer of trimethylaluminum (TMA) on GaAs(100) as a function of coverage down to 17 monolayers. The absolute scattering cross-section of the CH_3-symmetric stretching mode of TMA was found to be 8.0 × 10^<-29> cm2/dimer sr line. The corresponding cross-section in the gaseous state is 2.6 × 10^<-29> cm2/dimer sr line. The observed enhancement of the cross-section in the multilayer is due to the effect of the molecular field. The scattering cross-section of the CH_3-symmetric stretching mode of gaseous trimethylgallium (TMG) is 1.3 × 10^<-29> cm2/molecule sr line. Based on these data on the absolute Raman cross-sections, we expect that the monolayer of these molecules on GaAs would be extremely difficult to observe by Raman scattering in a crystal growing environment.
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/4407
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Raman Scattering from Trimethylaluminum (TMA) :Free and Adsorbed Molecules on GaAs(100)
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Veröffentlichung: | 1993 |
Medientyp: | Elektronische Ressource |
DOI: | 10.1016/0368-2048(93)80161-E |
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