Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
2008
Online
Elektronische Ressource
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with full-Heusler alloy Co2MnSi thin films as both lower and upper electrodes and with a MgO tunnel barrier. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 179% at room temperature (RT) and 683% at 4.2 K. In addition, the TMR ratio exhibited oscillations as a function of the MgO tunnel barrier thickness (tMgO) at RT, having a period of 0.28 nm, for tMgO ranging from 1.8 to 3.0 nm.
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Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
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Veröffentlichung: | 2008 |
Medientyp: | Elektronische Ressource |
DOI: | 10.1063/1.2843756 |
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