Enhanced lateral growth of AlN epitaxial layer on sapphire by introducing periodically pulsed-TMGa flows
In: Superlattices and Microstructures, Jg. 131 (2019-07-01), S. 59-65
Online
academicJournal
Zugriff:
Titel: |
Enhanced lateral growth of AlN epitaxial layer on sapphire by introducing periodically pulsed-TMGa flows
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Autor/in / Beteiligte Person: | Qiu, Xinjia ; Lv, Zesheng ; He, Yingyou ; Wu, Zhisheng ; Jiang, Hao |
Link: | |
Zeitschrift: | Superlattices and Microstructures, Jg. 131 (2019-07-01), S. 59-65 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0749-6036 (electronic) |
DOI: | 10.1016/j.spmi.2019.05.034 |
Sonstiges: |
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