A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET
In: Superlattices and Microstructures, Jg. 92 (2016-04-01), S. 316-329
Online
academicJournal
Zugriff:
Titel: |
A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET
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Autor/in / Beteiligte Person: | Priya, Anjali ; Mishra, Ram Awadh |
Link: | |
Zeitschrift: | Superlattices and Microstructures, Jg. 92 (2016-04-01), S. 316-329 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 0749-6036 (electronic) |
DOI: | 10.1016/j.spmi.2016.01.041 |
Sonstiges: |
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