Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects
In: Superlattices and Microstructures, Jg. 82 (2015-06-01), S. 40-54
Online
academicJournal
Zugriff:
Titel: |
Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects
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Autor/in / Beteiligte Person: | Padmanaban, B. ; Ramesh, R. ; Nirmal, D. ; Sathiyamoorthy, S. |
Link: | |
Zeitschrift: | Superlattices and Microstructures, Jg. 82 (2015-06-01), S. 40-54 |
Veröffentlichung: | 2015 |
Medientyp: | academicJournal |
ISSN: | 0749-6036 (electronic) |
DOI: | 10.1016/j.spmi.2015.01.021 |
Sonstiges: |
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