Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs
In: Microelectronic Engineering, Jg. 216 (2019-08-15)
Online
academicJournal
Zugriff:
Titel: |
Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs
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Autor/in / Beteiligte Person: | Contoyiannis, Y. ; Potirakis, S.M. ; Stavrinides, S.G. ; Hanias, M.P. ; Tassis, D. ; Theodorou, C.G. |
Link: | |
Zeitschrift: | Microelectronic Engineering, Jg. 216 (2019-08-15) |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0167-9317 (electronic) |
DOI: | 10.1016/j.mee.2019.111027 |
Sonstiges: |
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