Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
In: Solid State Electronics, Jg. 62 (2011), Heft 1, S. 142-145
Online
academicJournal
Zugriff:
Titel: |
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
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Autor/in / Beteiligte Person: | Fu, Yi-Keng ; Lu, Yu-Hsuan ; Jiang, Ren-Hao ; Chen, Bo-Chun ; Fang, Yen-Hsiang ; Xuan, Rong ; Su, Yan-Kuin ; Lin, Chia-Feng ; Chen, Jebb-Fang |
Link: | |
Zeitschrift: | Solid State Electronics, Jg. 62 (2011), Heft 1, S. 142-145 |
Veröffentlichung: | 2011 |
Medientyp: | academicJournal |
ISSN: | 0038-1101 (electronic) |
DOI: | 10.1016/j.sse.2011.04.018 |
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