High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH 3
In: Journal of Crystal Growth, Jg. 200 (1999), Heft 1, S. 63-69
Online
academicJournal
Zugriff:
Titel: |
High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH 3
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Autor/in / Beteiligte Person: | Hwang, Jin Soo ; Tanaka, Satoru ; Iwai, Sohachi ; Aoyagi, Yoshinobu ; Seong, Seeyearl |
Link: | |
Zeitschrift: | Journal of Crystal Growth, Jg. 200 (1999), Heft 1, S. 63-69 |
Veröffentlichung: | 1999 |
Medientyp: | academicJournal |
ISSN: | 0022-0248 (electronic) |
DOI: | 10.1016/S0022-0248(98)00893-8 |
Sonstiges: |
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