Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage
In: Journal of Crystal Growth, Jg. 490 (2018-05-15), S. 56-60
Online
academicJournal
Zugriff:
Titel: |
Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage
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Autor/in / Beteiligte Person: | Wu, Hualong ; Wang, Hailong ; Chen, Yingda ; Zhang, Lingxia ; Chen, Zimin ; Wu, Zhisheng ; Wang, Gang ; Jiang, Hao |
Link: | |
Zeitschrift: | Journal of Crystal Growth, Jg. 490 (2018-05-15), S. 56-60 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 0022-0248 (electronic) |
DOI: | 10.1016/j.jcrysgro.2018.03.020 |
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