Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
In: Journal of Crystal Growth, Jg. 248 (2003), S. 119-123
Online
academicJournal
Zugriff:
Titel: |
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
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Autor/in / Beteiligte Person: | Longo, M. ; Magnanini, R. ; Parisini, A. ; Tarricone, L. ; Carbognani, A. ; Bocchi, C. ; Gombia, E. |
Link: | |
Zeitschrift: | Journal of Crystal Growth, Jg. 248 (2003), S. 119-123 |
Veröffentlichung: | 2003 |
Medientyp: | academicJournal |
ISSN: | 0022-0248 (electronic) |
DOI: | 10.1016/S0022-0248(02)01846-8 |
Sonstiges: |
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