Design And Analysis Of Gate-All-Around (GAA) Triple Material Gate Charge Plasma Nanowire FET
In: International Conference on Disruptive Technologies for Multi-Disciplinary Research and Applications (CENTCON); Jg. 1 (2021-11-19) S. 85-89
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Zugriff:
Titel: |
Design And Analysis Of Gate-All-Around (GAA) Triple Material Gate Charge Plasma Nanowire FET
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Autor/in / Beteiligte Person: | Solay, Leo Raj ; Anand, Sunny ; Amin, S. Intekhab ; Kumar, Pradeep |
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Quelle: | International Conference on Disruptive Technologies for Multi-Disciplinary Research and Applications (CENTCON); Jg. 1 (2021-11-19) S. 85-89 |
Veröffentlichung: | 2021 |
Medientyp: | Konferenz |
ISBN: | 978-1-6654-0016-9 (print) ; 978-1-6654-0017-6 (print) |
DOI: | 10.1109/CENTCON52345.2021.9688087 |
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