Design and Simulation of Triple Material Gate InAs/Si Heterojunction TFET on SEL-BOX Substrates: Temperature Impact Analysis
In: IEEE 4th International Conference on Computing, Power and Communication Technologies (GUCON); (2021-09-24) S. 1-6
Online
Konferenz
Zugriff:
Titel: |
Design and Simulation of Triple Material Gate InAs/Si Heterojunction TFET on SEL-BOX Substrates: Temperature Impact Analysis
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Autor/in / Beteiligte Person: | Singh, Ashish Kumar ; Tripathy, Manas Ranjan ; Upadhyay, Rishibrind Kumar ; Jit, Satyabrata |
Link: | |
Quelle: | IEEE 4th International Conference on Computing, Power and Communication Technologies (GUCON); (2021-09-24) S. 1-6 |
Veröffentlichung: | 2021 |
Medientyp: | Konferenz |
ISBN: | 978-1-7281-9951-1 (print) ; 978-1-7281-9950-4 (print) |
DOI: | 10.1109/GUCON50781.2021.9573526 |
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