Layout-Induced Strain Study for RF Performance Improvement of 22-nm UTBB FDSOI PFET
In: IEEE Transactions on Electron Devices, Jg. 68 (2021-07-01), Heft 7, S. 3230-3237
Online
academicJournal
Zugriff:
Titel: |
Layout-Induced Strain Study for RF Performance Improvement of 22-nm UTBB FDSOI PFET
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Autor/in / Beteiligte Person: | Sloyan, K. ; Ravaux, F. ; Zhao, Z. ; Kleimaier, D. ; Utess, D. ; Lehmann, S. ; Andee, Y. ; Hoentschel, J. ; Ghaferi, A.A. ; Saadat, I. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 68 (2021-07-01), Heft 7, S. 3230-3237 |
Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2021.3077828 |
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