Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base
In: IEEE Transactions on Electron Devices, Jg. 35 (1988-12-01), Heft 12, S. 2443-2443
Online
academicJournal
Zugriff:
Titel: |
Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base
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Autor/in / Beteiligte Person: | Hayes, J.R. ; Bhat, R. ; Colas, E. ; Esagui, R. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 35 (1988-12-01), Heft 12, S. 2443-2443 |
Veröffentlichung: | 1988 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/16.8865 |
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