Improved Electrical Degradation of AlInGaN/GaN HEMT by using Triethylgallium Grown GaN channel and Cap
In: Compound Semiconductor Week (CSW); (2019-05-01) S. 1-1
Online
Konferenz
Zugriff:
Titel: |
Improved Electrical Degradation of AlInGaN/GaN HEMT by using Triethylgallium Grown GaN channel and Cap
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Autor/in / Beteiligte Person: | Sanyal, Indraneel ; Hu, Ting-Yu ; Lee, Yen-Chang ; Lin, En-Shuo ; Chyi, Jen-Inn |
Link: | |
Quelle: | Compound Semiconductor Week (CSW); (2019-05-01) S. 1-1 |
Veröffentlichung: | 2019 |
Medientyp: | Konferenz |
ISBN: | 978-1-7281-0080-7 (print) ; 978-1-7281-0079-1 (print) |
DOI: | 10.1109/ICIPRM.2019.8819108 |
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