Back-Gate Bias and Substrate Doping Influenced Substrate Effect in UTBB FD-SOI MOS Transistors: Analysis and Optimization Guidelines
In: IEEE Transactions on Electron Devices, Jg. 66 (2019-02-01), Heft 2, S. 861-867
Online
academicJournal
Zugriff:
Titel: |
Back-Gate Bias and Substrate Doping Influenced Substrate Effect in UTBB FD-SOI MOS Transistors: Analysis and Optimization Guidelines
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Autor/in / Beteiligte Person: | Bhoir, M.S. ; Chauhan, Y.S. ; Mohapatra, N.R. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 66 (2019-02-01), Heft 2, S. 861-867 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2018.2888799 |
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