Impact of Doping Concentration on the performance of TMG Re-S/D FDSOI MOSFET
In: 5th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON); (2018-11-01) S. 1-6
Online
Konferenz
Zugriff:
Titel: |
Impact of Doping Concentration on the performance of TMG Re-S/D FDSOI MOSFET
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Autor/in / Beteiligte Person: | Priya, Anjali ; Srivastava, Nilesh Anand ; Mishra, Ram Awadh |
Link: | |
Quelle: | 5th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON); (2018-11-01) S. 1-6 |
Veröffentlichung: | 2018 |
Medientyp: | Konferenz |
ISBN: | 978-1-5386-5002-8 (print) |
DOI: | 10.1109/UPCON.2018.8596870 |
Sonstiges: |
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