Performance analysis of gate material engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs
In: 3rd International Conference on Devices, Circuits and Systems (ICDCS); (2016-03-01) S. 89-92
Online
Konferenz
Zugriff:
Titel: |
Performance analysis of gate material engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs
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Autor/in / Beteiligte Person: | Adak, Sarosij ; Swain, Sanjit Kumar ; Raj, Godwin ; Rahaman, Hafizur ; Sarkar, Chandan Kumar |
Link: | |
Quelle: | 3rd International Conference on Devices, Circuits and Systems (ICDCS); (2016-03-01) S. 89-92 |
Veröffentlichung: | 2016 |
Medientyp: | Konferenz |
ISBN: | 978-1-5090-2309-7 (print) |
DOI: | 10.1109/ICDCSyst.2016.7570631 |
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