Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
In: IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO); (2016-04-01) S. 132-134
Online
Konferenz
Zugriff:
Titel: |
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
|
---|---|
Autor/in / Beteiligte Person: | Haider, Ali ; Kizir, Seda ; Deminskyi, Piter ; Tsymbalenko, Oleksandr ; Leghari, Shahid Ali ; Biyikli, Necmi ; Alevli, Mustafa ; Gungor, Nese |
Link: | |
Quelle: | IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO); (2016-04-01) S. 132-134 |
Veröffentlichung: | 2016 |
Medientyp: | Konferenz |
ISBN: | 978-1-5090-1431-6 (print) |
DOI: | 10.1109/ELNANO.2016.7493030 |
Sonstiges: |
|