Electron Transport Models For Unstrained And Strained Si And SiGe
In: International Workshop on VLSI Process and Device Modeling; (1993) S. 110-111
Online
Konferenz
Zugriff:
Titel: |
Electron Transport Models For Unstrained And Strained Si And SiGe
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Autor/in / Beteiligte Person: | Ershov, M. ; Ryzhii, V. |
Link: | |
Quelle: | International Workshop on VLSI Process and Device Modeling; (1993) S. 110-111 |
Veröffentlichung: | 1993 |
Medientyp: | Konferenz |
ISBN: | 0-7803-1338-0 (print) ; 978-0-7803-1338-5 (print) |
DOI: | 10.1109/VPAD.1993.724744 |
Sonstiges: |
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