Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of GaN-Based Light-Emitting Diodes
In: Journal of Display Technology, Jg. 9 (2013-04-01), Heft 4, S. 292-296
Online
academicJournal
Zugriff:
Titel: |
Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of GaN-Based Light-Emitting Diodes
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Autor/in / Beteiligte Person: | Chang, H. M. ; Lai, W. C. ; Chang, S. J. |
Link: | |
Zeitschrift: | Journal of Display Technology, Jg. 9 (2013-04-01), Heft 4, S. 292-296 |
Veröffentlichung: | 2013 |
Medientyp: | academicJournal |
ISSN: | 1551-319X (print) ; 1558-9323 (print) |
DOI: | 10.1109/JDT.2012.2235817 |
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