300 V Field-MOS FETs for HV-switching IC
In: 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD); (2011-05-01) S. 40-43
Online
Konferenz
Zugriff:
Titel: |
300 V Field-MOS FETs for HV-switching IC
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Autor/in / Beteiligte Person: | Miyoshi, T. ; Tominari, T. ; Hayashi, M. ; Ito, A. ; Yoshinaga, M. ; Ueno, S. ; Oshima, T. ; Wada, S. |
Link: | |
Quelle: | 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD); (2011-05-01) S. 40-43 |
Veröffentlichung: | 2011 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-8425-6 (print) ; 978-1-4244-8423-2 (print) ; 978-1-4244-8424-9 (print) |
ISSN: | 1063-6854 (print) ; 1946-0201 (print) ; 1943-653X (print) |
DOI: | 10.1109/ISPSD.2011.5890785 |
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