Heavily carbon doped InGaAs lattice matched to InP grown by LP-MOCVD using TMIn, TMGa and liquid CCl/sub 4/
In: Seventh International Conference on Indium Phosphide and Related Materials; (1995) S. 144-147
Online
Konferenz
Zugriff:
Titel: |
Heavily carbon doped InGaAs lattice matched to InP grown by LP-MOCVD using TMIn, TMGa and liquid CCl/sub 4/
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Autor/in / Beteiligte Person: | Hong, K. ; Pavlidis, D. |
Link: | |
Quelle: | Seventh International Conference on Indium Phosphide and Related Materials; (1995) S. 144-147 |
Veröffentlichung: | 1995 |
Medientyp: | Konferenz |
ISBN: | 0-7803-2147-2 (print) ; 978-0-7803-2147-2 (print) |
DOI: | 10.1109/ICIPRM.1995.522098 |
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