Three region Hetero-Material Gate Oxide Stack (TMGOS) Epi-MOSFET: A new device structure for reduced short channel effects
In: International Semiconductor Device Research Symposium; (2005) S. 72-73
Online
Konferenz
Zugriff:
Titel: |
Three region Hetero-Material Gate Oxide Stack (TMGOS) Epi-MOSFET: A new device structure for reduced short channel effects
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Autor/in / Beteiligte Person: | Goel, K. ; Saxena, M. ; Gupta, M. ; Gupta, R.S. |
Link: | |
Quelle: | International Semiconductor Device Research Symposium; (2005) S. 72-73 |
Veröffentlichung: | 2005 |
Medientyp: | Konferenz |
ISBN: | 1-4244-0083-X (print) ; 978-1-4244-0083-6 (print) |
DOI: | 10.1109/ISDRS.2005.1595983 |
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