Optical and lasing characteristics of 1.55 /spl mu/m InGaAs/InGaAsP/InP quantum dots grown by MOCVD
In: International Conference on Indium Phosphide and Related Materials. 16th IPRM; (2004) S. 330-333
Online
Konferenz
Zugriff:
Titel: |
Optical and lasing characteristics of 1.55 /spl mu/m InGaAs/InGaAsP/InP quantum dots grown by MOCVD
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Autor/in / Beteiligte Person: | Pyun, S.H. ; Lee, S.H. ; Lee, I.C. ; Jeong, W.G. ; Jang, J.W. ; Kim, N.J. ; Hwang, M.S. ; Lee, D. ; Lee, J.H. ; Oh, D.G. |
Link: | |
Quelle: | International Conference on Indium Phosphide and Related Materials. 16th IPRM; (2004) S. 330-333 |
Veröffentlichung: | 2004 |
Medientyp: | Konferenz |
ISBN: | 0-7803-8595-0 (print) ; 978-0-7803-8595-5 (print) |
ISSN: | 1092-8669 (print) |
DOI: | 10.1109/ICIPRM.2004.1442722 |
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