Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage
In: IEEE Transactions on Electron Devices, Jg. 71 (2024-04-01), Heft 4, S. 2393-2398
Online
academicJournal
Zugriff:
Titel: |
Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage
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Autor/in / Beteiligte Person: | Xiong, W. ; Luo, B. ; Meng, W. ; Wu, X. ; Zhu, B. ; Ding, S. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 71 (2024-04-01), Heft 4, S. 2393-2398 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2024.3365457 |
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