Performance Analysis of Normally-Off $\beta-(\text{AlxGa} 1-\mathrm{x})_{2} \mathrm{O}_{3} / \text{Ga}_{2} \mathrm{O}_{3}$ High Electron Mobility Transistor (HEMT) With p-GaN Gate and Addon AlGa2O3 Layer
In: 3rd International Conference on Advancement in Electronics & Communication Engineering (AECE); (2023-11-23) S. 779-784
Online
Konferenz
Zugriff:
Titel: |
Performance Analysis of Normally-Off $\beta-(\text{AlxGa} 1-\mathrm{x})_{2} \mathrm{O}_{3} / \text{Ga}_{2} \mathrm{O}_{3}$ High Electron Mobility Transistor (HEMT) With p-GaN Gate and Addon AlGa2O3 Layer
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Autor/in / Beteiligte Person: | Mukherjee, Praskandan ; Kashyap, Nitesh ; Ranjan, Ravi |
Link: | |
Quelle: | 3rd International Conference on Advancement in Electronics & Communication Engineering (AECE); (2023-11-23) S. 779-784 |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-3072-4 (print) |
DOI: | 10.1109/AECE59614.2023.10428298 |
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