A New Gate-Trench Junctionless SiC Power MOSFET: Performance Assessement and Circuit Level Investigation
In: 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE); (2023-10-25) S. 1-5
Online
Konferenz
Zugriff:
Titel: |
A New Gate-Trench Junctionless SiC Power MOSFET: Performance Assessement and Circuit Level Investigation
|
---|---|
Autor/in / Beteiligte Person: | Zerroumda, B. ; Ferhati, H. ; Djeffal, F. ; Bendjerad, A. |
Link: | |
Quelle: | 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE); (2023-10-25) S. 1-5 |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-0676-7 (print) ; 979-8-3503-0675-0 (print) |
ISSN: | 2642-3766 (print) |
DOI: | 10.1109/CCE60043.2023.10332810 |
Sonstiges: |
|