Design of kV-Class and Low RON E-Mode β-Ga2O3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa1−x)2O3/Ga2O3 Heterostructure
In: IEEE Transactions on Electron Devices, Jg. 70 (2023-11-01), Heft 11, S. 5795-5802
Online
academicJournal
Zugriff:
Titel: |
Design of kV-Class and Low RON E-Mode β-Ga2O3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa1−x)2O3/Ga2O3 Heterostructure
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Autor/in / Beteiligte Person: | Wang, D. ; Mudiyanselage, D.H. ; Fu, H. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 70 (2023-11-01), Heft 11, S. 5795-5802 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2023.3314575 |
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