Suppression of Drain Current Leakage and Short-Channel Effect in Lateral Ga2O3 RF MOSFETs Using (AlxGa1-x)2O3 Back-Barrier
In: IEEE Electron Device Letters, Jg. 44 (2023-11-01), Heft 11, S. 1829-1832
Online
academicJournal
Zugriff:
Titel: |
Suppression of Drain Current Leakage and Short-Channel Effect in Lateral Ga2O3 RF MOSFETs Using (AlxGa1-x)2O3 Back-Barrier
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Autor/in / Beteiligte Person: | Ohtsuki, T. ; Kamimura, T. ; Higashiwaki, M. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 44 (2023-11-01), Heft 11, S. 1829-1832 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2023.3318215 |
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